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| NTMFS4841NH Power MOSFET Features 30 V, 59 A, Single N-Channel, SO-8FL * * * * * Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb-Free Devices* http://onsemi.com V(BR)DSS 30 V RDS(ON) MAX 7.0 mW @ 10 V 11.6 mW @ 4.5 V D (5,6) Unit V V A G (4) S (1,2,3) N-CHANNEL MOSFET ID MAX 59 A Applications * Refer to Application Note AND8195/D * CPU Power Delivery * DC-DC Converters MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA v10 s Power Dissipation RqJA v10 s Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current tp = 10 ms Steady State TA = 25C TA = 85C TA = 25C TA = 85C TA = 25C TA = 85C TA = 25C TA = 85C TA = 25C TA = 85C TA = 25C TA = 85C TC = 25C TC = 85C TC = 25C TC = 85C TA = 25C Symbol VDSS VGS ID Value 30 20 13.5 9.7 2.16 1.1 21.8 15.7 5.7 2.9 8.6 6.2 0.87 0.45 59 42.5 41.7 21.7 177 -55 to +150 35 6 98 PD ID W A 1 MARKING DIAGRAM D S S S G 4841NH AYWWG G D D PD ID W A SO-8 FLAT LEAD CASE 488AA STYLE 1 D PD ID W A A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) PD IDM TJ, TSTG IS dV/dt EAS W A C ORDERING INFORMATION Device NTMFS4841NHT1G NTMFS4841NHT3G Package SO-8FL (Pb-Free) SO-8FL (Pb-Free) Shipping 1500 / Tape & Reel 5000 / Tape & Reel Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt Single Pulse Drain-to-Source Avalanche Energy (VDD = 24 V, VGS = 10 V, IL = 25.6 A, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) A V/ns mJ For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. TL 260 C *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 2. Surface-mounted on FR4 board using the minimum recommended pad size. (c) Semiconductor Components Industries, LLC, 2010 May, 2010 - Rev. 4 1 Publication Order Number: NTMFS4841NH/D NTMFS4841NH THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction-to-Case (Drain) Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - Steady State (Note 2) Junction-to-Ambient (tv10 s) Symbol RqJC RqJA RqJA RqJA Value 3 57.8 143.5 22.1 C/W Unit ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/ TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) VGS = 10 V to 11.5 V VGS = 4.5 V Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf td(ON) tr td(OFF) tf VGS = 11.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 12.1 23.3 14.1 4.9 7.2 20.6 21.9 2.9 18.1 34.9 21.1 7.3 10.7 30.9 32.9 4.4 ns ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD QG(TOT) VGS = 11.5 V, VDS = 15 V, ID = 30 A VGS = 4.5 V, VDS = 15 V; ID = 30 A VGS = 0 V, f = 1 MHz, VDS = 12 V 1565 325 173 11.3 1.4 5.3 4.5 24.4 2113 439 268 16.7 2.1 7.9 6.8 33 nC nC pF gFS ID = 30 A ID = 15 A ID = 30 A ID = 15 A VDS = 1.5 V, ID = 50 A VGS = 0 V, VDS = 24 V TJ = 25 C TJ = 125C VGS = 0 V, ID = 250 mA 30 28 1 10 100 V mV/C mA nA Symbol Test Condition Min Typ Max Unit Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance VDS = 0 V, VGS = 20 V VGS = VDS, ID = 250 mA 1.5 2.1 5.6 4.8 4.8 8.8 8.5 57 2.5 V mV/C 7.0 mW 11.6 S 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTMFS4841NH ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD tRR ta tb QRR LS LD LG RG TA = 25C VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A VGS = 0 V, IS = 30 A TJ = 25C TJ = 125C 0.86 0.71 18.8 11.4 7.4 6.7 nC ns 1.2 V Symbol Test Condition Min Typ Max Unit Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance Gate Inductance Gate Resistance 0.93 0.005 1.84 0.90 nH W 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 NTMFS4841NH 100 95 90 85 80 75 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 4.8 V 5.0 V 7.0 V 10 V 4.6 V 4.4 V 4.2 V 4.0 V 3.8 V 3.6 V 3.4 V VGS = 3.2 V 0 1 2 3 4 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 6 TJ = 25C ID, DRAIN CURRENT (A) 90 80 70 60 50 40 30 20 10 0 1 ID, DRAIN CURRENT (A) TC = 25C TC = 125C TC = -55C 3 4 5 6 7 2 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.013 0.012 0.011 0.010 0.009 0.008 0.007 0.006 0.005 0.004 3.0 4.0 5.0 6.0 7.0 8.0 9.0 ID = 30 A TJ = 25C 10 11 0.012 0.0115 T = 25C J 0.011 0.0105 0.01 0.0095 VGS = 4.5 V 0.009 0.0085 0.008 0.0075 0.007 0.0065 0.006 0.0055 VGS = 11.5 V 0.005 0.0045 0.004 0.0035 0.003 0.0025 0.002 10 15 20 25 30 35 40 45 50 55 VGS, GATE-TO-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On-Resistance versus Gate-to-Source Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.7 1.6 ID = 30 A VGS = 10 V 1.5 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 -55 -35 -15 5 25 45 65 85 105 145 0.1 IDSS, LEAKAGE (nA) 1.4 10000 Figure 4. On-Resistance versus Drain Current and Gate Voltage VGS = 0 V 1000 100 10 1 TJ = 150C TJ = 125C TJ = 25C 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 4 NTMFS4841NH VGS, GATE-TO-SOURCE VOLTAGE (V) 2400 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 12 TJ = 25C CISS 10.5 9 7.5 6 4.5 3 1.5 0 0 2 4 6 8 QGS QGD VDD = 15 V VGS = 0 V - 11.5 V ID = 30 A TJ = 25C 10 12 14 16 18 20 22 24 QT C, CAPACITANCE (pF) COSS CRSS 15 10 5 0 5 VGS VDS 10 15 20 25 Qg, TOTAL GATE CHARGE (nC) GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 100 VDS = 15 V ID = 15 A VGS = 11.5 V t, TIME (ns) tr 10 td(on) tf 1 Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Gate Charge 30 25 20 15 10 5 0 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (V) 1.0 VGS = 0 V TJ = 25C td(off) 1 10 RG, GATE RESISTANCE (W) 100 Figure 9. Resistive Switching Time Variation versus Gate Resistance IS, SOURCE CURRENT (A) Figure 10. Diode Forward Voltage versus Current ID, DRAIN CURRENT (A) VGS = 20 V Single Pulse TC = 25C 10 ms EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 1000 110 100 90 80 70 60 50 40 30 20 10 0 25 50 75 100 125 ID = 25.6 A 100 100 ms 10 1 ms RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 10 ms dc 100 1 150 175 VDS, DRAIN-TO-SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 5 NTMFS4841NH 80 70 60 50 gFS, (S) 40 30 20 10 0 0 10 20 30 40 50 DRAIN CURRENT (A) VDS = 1.5 V 60 70 80 Figure 13. GFS versus Drain Current http://onsemi.com 6 NTMFS4841NH PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO-8FL) CASE 488AA-01 ISSUE D 0.20 C D 2 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 2X A B 5 2X D1 0.20 C E1 2 E c 4X q A1 1 2 3 4 TOP VIEW 3X C SEATING PLANE 0.10 C A 0.10 C SIDE VIEW 8X e DETAIL A DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 --- 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.50 4.90 5.10 3.50 --- 4.22 6.15 BSC 5.50 5.80 6.10 3.45 --- 4.30 1.27 BSC 0.51 0.61 0.71 0.51 --- --- 0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ --- 12 _ DETAIL A SOLDERING FOOTPRINT* 1.270 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 3X b e/2 1 4 0.750 4X 0.10 0.05 CAB c L 1.000 4X 0.965 1.330 0.495 3.200 0.475 2X 2X K E2 L1 6 5 0.905 4.530 2X M G D2 BOTTOM VIEW 1.530 4.560 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 7 NTMFS4841NH/D |
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